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Indium gallium arsenide
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11 $GaN_{y}As_{1-x-y}Bi_{x} Alloy Lattice Matched to GaAs with 1.3 Photoluminescence Emission$	GaN_{y}As_{1-x-y}Bi_{x} Alloy Lattice Matched to GaAs with 1.3 Photoluminescence Emission Add to Reading List Source URL: www.1974eiko.co.jp Language: English - Date: 2009-05-08 06:40:06 Spectroscopy Solar cells Indium gallium arsenide Crystallography Gallium arsenide Photoluminescence Laser diode Light-emitting diode AS1 Reflection high-energy electron diffraction Bix Beiderbecke Thermodynamic temperature
12	Towards vertical III-V nanowire devices on silicon Erik P.A.M. Bakkers, Magnus T. Borgstrom, Wim van den Einden, Maarten van Weert, Ethan D. Minot, Freek Kelkensberg, Maarten van Kouwen, Jorden A. van Dam, Leo P. Kouwen Add to Reading List Source URL: kouwenhovenlab.tudelft.nl Language: English - Date: 2012-01-11 10:02:02 Chemistry Matter Mesoscopic physics Semiconductor device fabrication Optoelectronics Nanoelectronics Nanowire Indium phosphide Doping Quantum dot Semiconductor Gallium arsenide
13	80 Technology focus: InGaAs MOSFETs High-pressure anneal for indium gallium arsenide transistors Process reduces interface and border traps in aluminium oxide/hafnium dioxide Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-10-01 12:01:02
14	New Multijunction Design Leads to Ultra-Efficient Solar Cell Four-junction III-V multijunction cell uses buffer layers and other innovations to reach 45.6% efficiency at 690 suns NREL scientists have shown that four-junc Add to Reading List Source URL: www.nrel.gov Language: English - Date: 2015-09-01 17:25:25 Solar cells Energy conversion Semiconductor devices Multi-junction solar cell Gallium arsenide Indium gallium arsenide Photovoltaics National Renewable Energy Laboratory Quantum dot solar cell
15	LED DOT MATRIX BL-M23A881XXX Features: Ø 60.20mm (2.3”) F 5.0 dot matrix LED display, RGB COLOR Add to Reading List Source URL: shop.emscdn.com Language: English - Date: 2010-06-24 13:14:53 Inorganic compounds Semiconductor devices Lighting Light-emitting diode Gallium phosphide Indium gallium nitride Gallium nitride Gallium arsenide Silicon carbide Chemistry Nitrides Compound semiconductors
16	Microsoft Word - Press _release_pdf.doc Add to Reading List Source URL: www.psplc.com Language: English - Date: 2011-05-10 06:40:12 Physics Photonics Optical fiber Indium gallium arsenide Photonic crystal Chemistry Optics Electromagnetic radiation
17	Kinematic Analysis of a Space Mechanism—Rendezvous Simulator Add to Reading List Source URL: www.abhinavjournal.com Language: English - Date: 2014-01-30 00:15:07 Optoelectronics Inorganic compounds Semiconductor device fabrication Gallium phosphide Indium phosphide Gallium arsenide Laser diode Light-emitting diode Doping Chemistry Phosphides Compound semiconductors
18	Kinematic Analysis of a Space Mechanism—Rendezvous Simulator Add to Reading List Source URL: www.abhinavjournal.com Language: English - Date: 2013-12-17 06:28:40 Inorganic compounds Phosphides Thin film deposition Laser diode Gallium arsenide N-type semiconductor Gallium phosphide Indium phosphide Metalorganic vapour phase epitaxy Chemistry Optoelectronics Compound semiconductors
19	Artificial materials for nonlinear optics Abstract: Nonlinear optical materials play a key role in the development of coherent sources of radiation as they permit the frequency conversion of mature solid-state lasers int Add to Reading List Source URL: www.mirsurg.eu Language: English - Date: 2011-09-26 08:19:19 Photonics Solar cells Heat-assisted magnetic recording Laser diode Laser Gallium arsenide Nonlinear optics Indium gallium arsenide Anthony E. Siegman Chemistry Optics Physics
20	InGaAs-APD module lidar computing and electronics Detector for eye-safe lidars @ 1100 nm-1700nm Add to Reading List Source URL: www.licel.com Language: English - Date: 2009-04-08 11:52:14 LIDAR Indium gallium arsenide Chemistry Radio electronics Detectors